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US5881
CMOS Multi-Purpose Switch
* * * * * * * * *
Features and Benefits
Chopper stabilized amplifier stage New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality and cost
Applications
Solid state switch Limit switch Current limit Interrupter Current sensing
Ordering Information
Part No. US5881 US5881 Temperature Suffix Package Temperature Range E SO or UA -40oC to 85oC Extended L SO or UA -40oC to 150oC Automotive *Contact factory or sales representative for legacy temperature options
Functional Diagram
Description
The US5881 is a unipolar Hall effect sensor IC fabricated from mixed signal CMOS technology. It incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic switch points. There are many applications for this sensor in addition to those listed above. The design, specifications and performance have been optimized for applications of solid state switches. The output transistor will b switched on (BOP) in e the presence of a sufficiently strong South pole magnetic field facing the marked side of the package. Similarly, the output will be switched off (BRP) in the presence of a weaker South field and remain off with "0" field. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be switched on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the marked face.
V DD
Output
Voltage Regulator
Chopper
GND UA Package Pin 1 - V D D Pin 2 - GND Pin 3 - Output SO Package Pin 1 - VD D Pin 2 - Output Pin 3 - GND
Note: This is a static-sensitive device; please observe ESD precau tions. Reverse VDD protection is not included. For reverse voltage protection, a 100resistor in series with VDD is recommended. US5881 CMOS Multi-Purpose Switch 3901005881 Rev 5.0 24/July/01 Page 1
US5881
CMOS Multi-Purpose Switch
US5881 Electrical Specifications
Parameter Supply Voltage Supply Current Saturation Voltage Output Leakage Output Rise Time Output Fall Time Symbol Test Conditions VDD Operating IDD VDS(on) IOFF tr tf BBOP BUS5881 Magnetic Specifications
Parameter Operating Point3 Release Point Hysteresis Symbol Test Conditions BOP BRP Bhys Min 15 9.5 2.0 Typ 25 20 4.3 Max 30 5.5 Units mT mT mT
Notes: 1. 1 mT = 10 Gauss. 2. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be switched on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the markedface. 3. At -40C, maximum BOP = 35 mT.
Absolute Maximum Ratings
Supply Voltage (Operating), VDD Supply Current (Fault), IDD Output Voltage, VOUT Output Current (Fault), IOUT Power Dissipation, PD Operating Temperature Range, T A Storage Temperature Range, T S Maximum Junction Temp, TJ ESD Sensitivity (All Pins) 24V 50mA 24V 50mA 100mW -40C to 150C -65C to 150C 175C +/- 4KV
Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function o r design. Melexis does not assume any liability arising from the use of any product or application of any product or circuit described herein.
US5881 CMOS Multi-Purpose Switch
3901005881 Rev 5.0
24/July/01
Page 2
US5881
CMOS Multi-Purpose Switch
Performance Graphs
Typical Magnetic Switch Points Typical Magnetic Switch Points versus versus Supply Voltage Supply Voltage
35
Typical Magnetic Switch Points versus Temperature
35
5881
5881
BOP
30
Flux Density (mT)
30 B OP 25
25
Flux Density (mT)
BRP
20
B RP 20
15
10 15 5
BHYS
10 0 5 10 15 20 25
0 -40 0 40 80 120 150
Supply Voltage (V)
Temperature (C)
Minimum & Maximum Magnetic Switch Range versus Temperature
35
Output Voltage versus Output Voltage versus Flux Density Flux Density
30
5881
5881
BOP Max
30
Flux Density (mT)
24 V DD B OP
Output Voltage (V)
25
18
20
12
15
6 10 B RP V out
BRP Min
5 -40 0 40 80 120 160 0 -20 -10 0 10 20 30 40
Temperature (C)
Flux Density (mT)
US5881 CMOS Multi-Purpose Switch
3901005881 Rev 5.0
24/July/01
Page 3
US5881
CMOS Multi-Purpose Switch
Performance Graphs
Typical Supply Current versus Supply Voltage
5
Typical Saturation Voltage versus Temperature VDD = 12 V, I OUT = 20mA
5881
500
5881
4 TA = -40oC
400 VDS(ON)
Supply Current (mA)
3 TA = 25 oC
VDS(ON) (mV)
20 25 30
300
2 TA = 125oC
200
1
100
0 0 5 10 15
0 -40 0 40 80 120
o
160
200
Supply Voltage (V)
Temperature ( C)
Power Dissipation versus Temperature
500
Wave Soldering Parameters
All Devices All Devices
280
Package Power Dissipation (mW)
400
260
300
Solder Temperature (oC)
200
UA Package R JA =206oC/W
240
200
220
100 SO Package RJA =575oC/W 0 -40 0 40 80 120 160
200
0
5
10
15
20
25
30
Temperature ( oC)
Time in Wave Solder (Seconds)
US5881 CMOS Multi-Purpose Switch
3901005881 Rev 5.0
24/July/01
Page 4
US5881
CMOS Multi-Purpose Switch
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip size also contributes to lower physical stress and less power consumption.
Application Comments
If reverse supply protection is desired, use a resistor in series with the VDD pin. The resistor will limit the supply current (Fault), IDD, to 50 mA. For severe EMC conditions, use the application circuit below.
Installation
Consider temperature coefficients of Hall IC and magnetics, as well as air gap life time variations. Observe temperature limits during wave soldering.
Applications Examples
Two Wire Optional Current Biasing Circuit V
VDD D1 Z1 C1 Supply Voltage 4.7 nF RL 1.2K OUT C2 4.7nF Vss
Automotive and Severe Environment Protection Circuit
R1 100
DD
IIN
IDD
RL
Iout
Hall IC
Rb
Hall IC
The resistors R b and R L can be used to bias the input current, IIN. Refer to the part specification for limiting values. This circuit will help in getting the precise ON and OFF currents desired. B RP = Ioff = (V DD / Rb + I DD ) B OP = Ion = (Ioff + VDD / R L )
US5881 CMOS Multi-Purpose Switch
3901005881 Rev 5.0
24/July/01
Page 5
US5881
CMOS Multi-Purpose Switch
Physical Characteristics
1.60 1.40 4.30 3.90 2.64 2.34 45o Typical
UA Package Dimensions
5o Typical
UA Hall Plate / Chip Location
2.13 1.87 0.45 0.41
0.84 0.63
1.53 1.27
U58 * 945
0.48 0.43
3.20 2.80
45o Typical
Marked Surface All Dimensions in millimeters
1.75 1.55 0.38 Typical (see note 3)
0.20 0.00
0.41 0.35
1
2
3
NOTES: 1.) Controlling dimension: mm. 2.) Leads must be free of flash and plating voids. 3.) Do not bend leads within 1mm of lead to package interface. 4.) Package dimensions exclude molding flash. 5.) Tolerance is +/- 0.254 mm unless otherwise specified.
15.5 14.5
* MARKING: Line 1: 1st digit (U) 2nd and 3rd digits (58) Line 2: 1st digit (9) 2nd and 3rd digits(45)
= Supplier (Melexis) = Series (5880)
= Year (1999) = Week of Year
1.30 1.24
PINOUT: Pin 1 Pin 2 Pin 3
2.57 2.51 0.41 0.35
V DD GND Output
SOT-23 Package Dimensions (Top View)
0.50 0.35 0.20 MIN
3
3.00 2.60
1651
1
2.10 1.70
*
2
1.80 1.50
chip 0.66 0.56 0.25 0.10
Pin #
3.10 2.70 0.10 0.00
NOTES: 1. MARKING: 1st Digit (1) = Series (1880) 2nd Digit(6) = Year - 1996 Last Digits (51) = Week of Year 2. PINOUT (See Top View at left): Pin 1 VDD Pin 2 Output Pin 3 GND 3. Controlling dimension: mm. 4. Lead thickness after solder plating will be 0.254 mm maximum. 5. Package dimensions exclude molding flash. 6. The end flash shall not exceed 0.127 mm on each side of package. 7. Tolerance is +/- 0.254 mm unless otherwise specified.
SOT-23 Hall Plate / Chip Location (Bottom View)
0.95 0.85
0.90 0.70
1.30 1.00
1.55 1.45
For the latest version of this document, Go to our website at:
WWW.melexis.com
Or for additional information Contact Melexis Direct: Europe and Japan E-mail: sales_europe@melexis.com Phone: 011-32-13-670-780
US5881 CMOS Multi-Purpose Switch
USA and rest of the world E-mail: sales_usa@melexis.com Phone: (603)-223-2362
3901005881 Rev 5.0 24/July/01 Page 6

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